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Experimental Observation of Dirac-like Surface States and Topological Phase Transition in Pb[subscript 1-x]Sn[subscript x]Te(111) Films

机译:pb [下标1-x] sn [下标x] Te(111)薄膜中Dirac样表面态和拓扑相变的实验观察

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摘要

The surface of a topological crystalline insulator (TCI) carries an even number of Dirac cones protected by crystalline symmetry. We epitaxially grew high-quality Pb[subscript 1−x]Sn[subscript x]Te(111) films and investigated the TCI phase by in situ angle-resolved photoemission spectroscopy. Pb[subscript 1−x]Sn[subscript x]Te(111) films undergo a topological phase transition from a trivial insulator to TCI via increasing the Sn/Pb ratio, accompanied by a crossover from n-type to p-type doping. In addition, a hybridization gap is opened in the surface states when the thickness of the film is reduced to the two-dimensional limit. The work demonstrates an approach to manipulating the topological properties of TCI, which is of importance for future fundamental research and applications based on TCI.
机译:拓扑晶体绝缘体(TCI)的表面带有偶数个受晶体对称性保护的狄拉克锥。我们外延生长了高质量的Pb [下标1-x] Sn [下标x] Te(111)薄膜,并通过原位角分辨光发射光谱研究了TCI相。通过增加Sn / Pb比,Pb [下标1-x] Sn [下标x] Te(111)薄膜经历了从琐碎的绝缘体到TCI的拓扑相变,并伴随着从n型掺杂到p型掺杂的过渡。另外,当将膜的厚度减小到二维极限时,在表面状态下杂交间隙打开。这项工作展示了一种处理TCI拓扑特性的方法,这对于基于TCI的未来基础研究和应用非常重要。

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